feb.1999 mitsubishi thyristor modules tm130dz/cz/pz-m,-h high power general use insulated type outline drawing & circuit diagram dimensions in mm application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers tm130dz/cz/pz-m,-h ? i t (av) average on-state current .......... 130a ? v rrm repetitive peak reverse voltage ........ 400/800v ? v drm repetitive peak off-state voltage ........ 400/800v ? double arms ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 (dz type) (dz type) (bold line is connective bar.) 3 f 6.5 4?8 a 1 k 1 a 2 k 2 k2 g2 k1 g1 18 16 18 16 32 30 68.5 30 68.5 150 tab#110, t=0.5 40 39 32 23 7 a 1 cr 1 k 1 k 2 a 2 k 2 g 2 k 1 g 1 (dz) (cz) (pz) a 1 cr 1 k 1 k 2 cr 2 a 2 k 2 g 2 k 1 g 1 a 1 cr 1 k 1 k 2 cr 2 a 2 k 2 g 2 k 1 g 1 20 6 9 label cr 2
feb.1999 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm130dz/cz/pz-m,-h high power general use insulated type m 400 480 320 400 480 320 h 800 960 640 800 960 640 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c v nm kgcm nm kgcm g conditions single-phase, half-wave 180 conduction, t c =85 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =125 c charged part to case main terminal screw m8 mounting screw m6 typical value ratings 205 130 2600 2.8 10 4 100 10 3.0 10 5.0 4.0 C40~+125 C40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms on-state current average on-state current surge (non-repetitive) on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =390a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) measured with a 500v megohmmeter between main terminal and case min. 500 0.25 15 10 typ. max. 30 30 1.3 3.0 100 0.22 0.1
feb.1999 ? 10 ? 10 ? 10 0 10 0 10 1 10 1 10 0 10 3 10 4 10 1 10 2 10 ? 10 4 10 3 10 2 10 1 10 0.4 7 5 3 2 7 5 3 2 7 5 3 2 0.8 1.2 2.0 2.4 1.6 t j =125? 70 50 30 20 7 5 3 2 0 400 3200 10 1 100 800 1200 1600 2000 2400 2800 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =3.0v i gt = 100ma i fgm =4.0a p gm =10w v fgm =10v v gd =0.25v p g(av) = 3.0w t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 0.25 0 7 5 3 2 0.05 0.10 0.15 0.20 0 0 160 60 20 100 140 160 20 40 60 80 100 120 140 40 80 120 q =30 120 90 180 q 360 60 130 50 0 120 160 20 40 100 60 70 80 90 100 110 120 60 80 140 q =30 60 90 q 360 180 120 resistive, inductive load per single element resistive, inductive load per single element performance curves maximum on-state characteristic gate characteristics maximum transient thermal impedance (junction to case) maximum average on-state power dissipation (single phase halfwave) limiting value of the average on-state current (single phase halfwave) rated surge (non-repetitive) on-state current on-state current (a) surge (non-repetitive) on-state current (a) on-state voltage (v) conduction time (cycles at 60hz) gate voltage (v) average on-state power dissipation (w) transient thermal impedance ( c/w) case temperature ( c) time (s) gate current (ma) average on-state current (a) average on-state current (a) mitsubishi thyristor modules tm130dz/cz/pz-m,-h high power general use insulated type
feb.1999 0 0 200 40 200 160 40 80 120 80 120 160 q 360 q =30 60 270 dc 180 120 90 130 50 60 70 80 90 100 110 120 0 200 40 160 80 120 q =30 60 dc 270 q 360 180 90 120 0 0 320 80 40 400 120 350 300 250 200 150 100 50 160 200 240 280 q =180 60 90 30 q 360 q 120 50 0 320 80 40 130 120 160 200 240 280 60 70 80 90 100 110 120 q 360 q q =30 60 90 120 180 0 0 320 120 40 400 200 80 240 80 160 280 160 240 320 q =30 60 120 90 180 q 360 q 130 50 0 320 80 40 200 240 60 120 160 280 70 80 90 100 110 120 q 360 q q =30 60 180 90 120 per single module resistive, inductive load per single module resistive, inductive load per single element per single element resistive, inductive load resistive, inductive load resistive, inductive load resistive, inductive load maximum average on-state power dissipation (rectangular wave) limiting value of the average on-state current (rectangular wave) average on-state power dissipation (w) average on-state current (a) average on-state current (a) maximum average on-state power dissipation (single phase fullwave ac) limiting value of the rms on-state current (single phase fullwave ac) rms on-state current (a) rms on-state current (a) limiting value of the dc output current (single phase fullwave rectified) maximum on-state power dissipation (single phase fullwave rectified) on-state power dissipation (w) (per single module) dc output current (a) (per two modules) dc output current (a) (per two modules) average on-state power dissipation (w) case temperature ( c) case temperature ( c) case temperature ( c) (per single module) mitsubishi thyristor modules tm130dz/cz/pz-m,-h high power general use insulated type
feb.1999 0 0 400 80 400 320 320 160 240 240 160 80 q =30 60 120 90 q 360 50 0 400 80 130 60 320 160 240 70 80 90 100 110 120 90 q =30 60 120 q 360 resistive, inductive load resistive, inductive load case temperature ( c) (per single module) on-state power dissipation (w) (per single module) maximum on-state power dissipation (three phase fullwave rectified) limiting value of the dc output current (three phase fullwave rectified) dc output current (a) (per three modules) dc output current (a) (per three modules) mitsubishi thyristor modules tm130dz/cz/pz-m,-h high power general use insulated type
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